In 1879, E. H. Hall observed that when a magnetic field {FIXME ${/download/attachments/143560144/Bz.png?version=1&modificationDate=1454617498000&api=v2}$ is applied at a right angle to the direction of current flow in a conductor ({FIXME ${/download/attachments/143560144/xhat.png?version=1&modificationDate=1454617809000&api=v2}$), an electric field is created in a direction perpendicular to both ({FIXME ${/download/attachments/143560144/yhat.png?version=1&modificationDate=1454617837000&api=v2}$) [6]. The appearance of this unexpected field is now called the Hall effect and it is the most important of the galvanomagnetic effects because it yields information about the sign and concentration of charge carriers as well as their mobility. This lab will explore the origins of this field, and will make measurements of the hall voltage in a slab of germanium, a semiconductor material.

1 References


  • [1] A. C. Melissinos, Experiments in Modern Physics (second edition), Academic Press, 2003.
  • [2] A. C. Melissinos, Experiments in Modern Physics, Academic Press, 1966.
  • [3] C. Kittel, Introduction to Solid State Physics, John Wiley & Sons, New York.
  • [4] J. I. Pankove, Optical Processes in Semiconductors, Dover Publications, N. Y., 1972.
  • [5] N. W. Ashcroft and N. D. Mermin, Solid State Physics, Thompson Learning, 1976.
  • [6] E. H. Hall, American Journal of Mathematics, 2, 287 (1879).

2 Purposes


The purposes of this lab are as follows:

  • to familiarize you with the electronic transport properties of semiconductors including the concepts of holes and charge carrier mobility;
  • to observe the phenomenon of magnetoresistance and to compare resistivity in and out of a magnetic field;
  • to observe the Hall effect and to measure resistivity and the Hall coefficient as functions of temperature; and
  • to measure the band gap energy of germanium.

3 Theory


This theory section introduces a number of new condensed matter concepts and includes a lot of derivation. In order to make the main points clear, we have included a SUMMARY list at the end of each section to review the important points.

3.1 Hall effect for one type of charge carrier

{FIXME ${/download/attachments/143560144/Hall%20Effect.png?version=1&modificationDate=1454619402000&api=v2}$ Figure 1: Schematic of the Hall effect for one type of charge carrier (electrons). (Adapted from [5], Fig. 1.3, p 12.)

Let us begin by considering the motion of the free charge carriers of charge q in a conductor (Fig. 1). When an external electric field is applied, these charges feel a force F = qEwhich causes an acceleration, a = qE/m (where m is the mass of the charge carrier). If a particular carrier travels for a _mean free time__τ_before it scatters, – randomly changing speed and direction, – the average velocity over all carriers will be the drift velocity,

{FIXME ${/download/attachments/143560144/eqn_1.png?version=2&modificationDate=1454618327000&api=v2}$ (1)

This drift velocity produces a current with current density (current per unit cross-sectional area)