In 1879, E. H. Hall observed that when a magnetic field { ${/download/attachments/143560144/Bz.png?version=1&modificationDate=1454617498000&api=v2}$ is applied at a right angle to the direction of current flow in a conductor ({
${/download/attachments/143560144/xhat.png?version=1&modificationDate=1454617809000&api=v2}$), an electric field is created in a direction perpendicular to both ({
${/download/attachments/143560144/yhat.png?version=1&modificationDate=1454617837000&api=v2}$) [6]. The appearance of this unexpected field is now called the Hall effect and it is the most important of the galvanomagnetic effects because it yields information about the sign and concentration of charge carriers as well as their mobility. This lab will explore the origins of this field, and will make measurements of the hall voltage in a slab of germanium, a semiconductor material.
The purposes of this lab are as follows:
This theory section introduces a number of new condensed matter concepts and includes a lot of derivation. In order to make the main points clear, we have included a SUMMARY list at the end of each section to review the important points.
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Figure 1: Schematic of the Hall effect for one type of charge carrier (electrons). (Adapted from [5], Fig. 1.3, p 12.)
Let us begin by considering the motion of the free charge carriers of charge q in a conductor (Fig. 1). When an external electric field is applied, these charges feel a force F = qEwhich causes an acceleration, a = qE/m (where m is the mass of the charge carrier). If a particular carrier travels for a _mean free time__τ_before it scatters, – randomly changing speed and direction, – the average velocity over all carriers will be the drift velocity,
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This drift velocity produces a current with current density (current per unit cross-sectional area)